Method for improved planarization in semiconductor devices

ABSTRACT

A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectric material. The dielectric material may be planarized using a ceria-based slurry and using the silicon oxynitride mask layer as a stop layer.

TECHNICAL FIELD

The present invention relates generally to semiconductor manufacturingand, more particularly, to fabrication of integrated circuits.

BACKGROUND ART

The escalating demands for high density and performance associated withsemiconductor devices, such as non-volatile, electrically erasableprogrammable read only memory (EEPROM) devices, require small designfeatures, high reliability and increased manufacturing throughput. Thereduction of design features, however, challenges the limitations ofconventional methodology.

One particular problem with scaling memory devices to reduce their sizeis that the memory devices often exhibit degraded performance. Forexample, reducing the size of various structures in the memory devices,often results in an increased negative impact from fabricationprocessing techniques, such as etching techniques, depositiontechniques, and the like. Techniques that perform well at larger sizesmay introduce defects at a reduced scale. These problems may make itdifficult for the memory device to be efficiently programmed and/orerased and, ultimately, may lead to device failure.

DISCLOSURE OF THE INVENTION

In one aspect, a method may include forming a silicon oxynitride masklayer over a first layer; etching the first layer using the siliconnitride mask layer, to form a pattern in the first layer; filling thepattern with a dielectric material; and planarizing the dielectricmaterial using the silicon oxynitride mask layer as a stop layer.

In another aspect, a method for fabricating a semiconductor device mayinclude forming a first dielectric layer over a substrate; forming asecond dielectric layer over the first dielectric layer; forming asilicon oxynitride mask layer over the second dielectric layer; forminga photoresist layer over the silicon oxynitride mask layer; patterningthe photoresist layer to define mask regions; etching the siliconoxynitride mask layer form a silicon oxynitride mask; etching thesubstrate, the first dielectric layer, and the second dielectric layerto form at least one isolation trench in a portion of the substrate notcovered by the silicon oxynitride mask; filling the trench with an oxidematerial; planarizing the oxide material to an upper surface of siliconoxynitride mask using at least a ceria-based slurry; stripping thesilicon oxynitride mask from the semiconductor device; forming a thirddielectric layer over the second dielectric layer and the oxidematerial; and forming a control gate over at least a portion of thethird dielectric layer.

In yet another aspect, a method is provided for fabricating asemiconductor device. The method may include forming a first dielectriclayer over a substrate; forming a gate electrode layer over the firstdielectric layer; forming a silicon oxynitride mask over the gateelectrode layer; etching the first dielectric layer and the gateelectrode layer based on the silicon oxynitride mask; forming a bitlineregion in a portion of the substrate not covered by the siliconoxynitride mask; forming an oxide layer over the semiconductor device,the oxide layer filling the regions not covered by the siliconoxynitride mask; planarizing the oxide layer to an upper surface ofsilicon oxynitride mask using at least a ceria-based slurry; strippingthe silicon oxynitride mask from the semiconductor device; and forming awordline conductor layer over the gate electrode layer and the oxidelayer.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of this specification, illustrate an embodiment of the inventionand, together with the description, explain the invention. In thedrawings,

FIG. 1 illustrates an exemplary configuration of a flash EEPROM formedin accordance with one aspect described herein;

FIG. 2 is a flow diagram illustrating an exemplary process for forming asemiconductor memory device according to an aspect described herein;

FIGS. 3-12 illustrate exemplary views of a semiconductor memory devicefabricated according to the processing described in FIG. 2;

FIG. 13 is a flow diagram illustrating another exemplary process forforming a semiconductor memory device according to an aspect describedherein; and

FIGS. 14-21 illustrate exemplary views of a semiconductor memory devicefabricated according to the processing described in FIG. 13.

BEST MODE FOR CARRYING OUT THE INVENTION

The following detailed description of implementations consistent withthe principles of the invention refers to the accompanying drawings. Thesame reference numbers in different drawings may identify the same orsimilar elements. Also, the following detailed description does notlimit the invention. Instead, the scope of the invention is defined bythe appended claims and their equivalents.

Implementations consistent with the present invention providenon-volatile memory devices with improved lithographic spacing, such asflash electrically erasable programmable read only memory (EEPROM)devices. FIG. 1 illustrates an exemplary configuration of a flash EEPROM100 formed in accordance with an embodiment of the present invention.Flash memory 100 may include a plurality of memory cells 102, arrangedin a rectangular matrix or array of rows and columns, a plurality ofbitlines (BL) associated with each column, a plurality of word lines(WL) associated with each row, a bit line driver 104, a word line driver106, a power source 108 and a controller 110.

Assuming that there are n columns and m rows in EEPROM 100, the bitlinesmay be designated as BL₀ to BL_(n) and the wordlines may be designatedas WL₀ to WL_(m). Accordingly, there may be n+1 bitlines and m+1wordlines. Bitline driver 104 applies appropriate voltages to thebitlines. Similarly, appropriate voltages are applied to the wordlinesby wordline driver 106. The voltages applied to drivers 104 and 106 maybe generated by a power source 108 under the control of a controller110, which may include on-chip logic circuitry. The controller 110 mayalso control the drivers 104 and 106 to address the memory cellsindividually or collectively.

A memory cell 102 is located at each junction of a wordline and abitline. Each cell 102 may include a Metal-Oxide-Semiconductor (MOS)Field Effect Transistor (FET) having a source and drain formed in asemiconductor substrate, a floating gate, and a control gate separatedfrom the floating gate by an oxide-nitride-oxide (ONO) stack. Additionaldetails regarding the formation of cell 102 will be described below inrelation to FIGS. 2-12. As should be appreciated, the cells of a flashEEPROM differ from conventional FETs in that they include the floatinggate and tunnel oxide layer disposed between the control gate and thesemiconductor substrate in which the source and drain are formed.

Cells 102 illustrated in FIG. 1 may be designated using the notationT_(i,j), where j is the row (wordline) number and i is the column(bitline) number. The control gates of cells 102 are connected torespective word lines, and the drains of cells 102 are connected torespective bitlines as illustrated. The sources of all of the cells areconnected to the power source 108.

Exemplary Processing

FIG. 2 illustrates an exemplary process for forming a semiconductormemory device in an implementation consistent with aspects describedherein. In one implementation, the semiconductor memory device mayinclude an array of memory cells of a flash memory device, such as thatillustrated in FIG. 1. FIGS. 3-12 illustrate exemplary views of asemiconductor memory device fabricated according to the processingdescribed in FIG. 2.

Processing may begin with a semiconductor device 300 that includeslayers 310, 320, and 330. In an exemplary embodiment, layer 310 mayinclude a substrate of semiconductor device 300 and may include silicon,germanium, silicon-germanium or other semiconducting materials. Inalternative implementations, layer 310 may be a conductive layer or adielectric layer formed a number of layers above the surface of asubstrate in semiconductor device 300.

Layer 320 may be a dielectric layer formed on layer 310 in aconventional manner. In an exemplary implementation, dielectric layer320 may include an oxide, such as a silicon oxide (e.g., SiO₂), and mayhave a thickness ranging from about 50 Å to about 350 Å. In oneimplementation consistent with principles of the invention, a suitablemethod for forming layer 320 may include thermal oxidation process oflayer 310 at a temperature of about 750° C. to 1100° C. Alternatively,dielectric layer 320 may be deposited using a low pressure chemicalvapor deposition (LPCVD) process performed at a temperature of about400° C. to 800° C.

Layer 330 may be a second dielectric layer formed on layer 320 in aconventional manner. In one exemplary implementation, second dielectriclayer 330 may include a nitride, such as silicon nitride (e.g., Si₃N₄),and may have a thickness ranging from about 400 Å to about 1200 Å.Nitride layer 330 may form a sacrificial layer for use in formingtrenches and oxide regions described in additional detail below.

As shown in FIG. 4, a silicon oxynitride (SiON) mask layer 410 may beformed over layer 330 (act 205). In one exemplary implementation, SiONmask layer 410 may be formed by CVD, and may have a thickness rangingfrom about 100 Å to about 500 Å. SiON mask layer 410 may form ananti-reflective coating (ARC).

A photoresist material formed over mask layer 410 may be patterned andetched in a conventional manner to form a hard mask 510 on the topsurface of layer 330, as illustrated in FIG. 5 (act 210). Mask 510 maybe used to define active regions in the subsequently formed memorydevice and indicate areas that will not be etched during formation ofisolation regions in semiconductor device 300. By providinganti-reflective coating SiON mask layer 410 beneath a photoresistmaterial prior to performing photolithography, optical reflections ofthe radiation used to develop the mask pattern may be minimized.Accordingly, by using ARC SiON layer 410, a more precise lithography maybe applied, resulting in narrower mask spacings.

Semiconductor device 300 may then be etched, as illustrated in FIG. 6,to remove portions of layers 310 and 320, thereby forming shallowtrenches 610 (act 215). The etch may also be referred to as a shallowtrench isolation (STI) etch.

Following formation of trenches 610, a field oxide (FOX) layer 710 maybe deposited into trenches 610 and over SiON mask 510, as illustrated inFIG. 7 (act 220). In one implementation consistent with principles ofthe invention, FOX layer 710 may be deposited by high density plasmachemical vapor deposition (HDP CVD), although suitable alternativedeposition techniques may also be employed.

In accordance with aspects described herein, FOX layer 710 may beplanarized using, for example, a slurry-based chemical mechanicalpolishing (CMP) process to form a planar top surface 810 and to exposethe upper surface of SiON mask 510, as illustrated, in FIG. 8 (act 225).After the CMP process, the top surface of FOX layer 710 may besubstantially planar with the top surface of SiON mask 510. In oneimplementation, this top surface may be approximately 1000 Å above a topsurface of substrate layer 310. In one exemplary implementation, CMP maybe performed using at least a ceria-based slurry. In one embodiment, CMPmay be initiated using a silica-based slurry that is then transitionedto a ceria-based slurry. By using a SiON mask 510 as a CMP stop layer, alower selectivity ceria-based slurry may be used at a faster polishrate, resulting in a more robust clearing margin. Clearing margin refersto a device's ability to survive oxide polishing while protectingunderlying layers from being adversely effected by the polishing.

As is known, polishing is not performed in a perfectly uniform manner,since some areas of a semiconductor device may need polished more thatother areas in order to ensure all the residual oxide is removed fromactive areas. For the polishing using conventional nitride mask layer330 (i.e., no SiON mask 510), about 50 Å to 200 Å of nitride layer 330may be polished depending on the device. However, using SiON mask, noneof underlying nitride layer 330 will be polished.

Following trench and FOX layer formation, semiconductor device 300 maybe cleaned, as illustrated in FIG. 9, to remove or strip SiON mask 510and expose a top surface of nitride layer 330 (act 230). Additionally,in one exemplary implementation, FOX layer 710 may also be etched to alevel approximately coplanar with a top surface of substrate 310. In oneexemplary implementation, SiON mask layer 510 may be etched using adilute hydrofluoric acid (HF) solution that is selective to SiON 510 andFOX layer 710 and will not remove layer 320 and with minimal damage tocharge storage layer 620. It should be understood that the particularetch chemistry, flow rates, RF power, wafer bias voltage, etchingduration and other parameters may be optimized based on the particularsemiconductor device being etched, the particular plasma etching chamberused and the guidance disclosed herein.

Referring now FIG. 10, following cleaning of SiON mask 510 and FOX layer510 to desired levels, nitride layer 330 and buffer oxide layer 320 maybe removed in a conventional manner (act 235). In one implementationlayers 330 and 320 may be etched by a phosphoric acid solution.Following etching of layers 330 and 320, the top surface of substratelayer 310 and the top surface of FOX layer 710 are substantiallycoplanar.

Referring to FIG. 11, gate structures 1120 may be formed in aconventional manner, with each gate structure 1120 including adielectric layer 1110 and a charge storage element 1125 (act 240). In anexemplary implementation, dielectric layer 1110 may include an oxide,such as a silicon oxide (e.g., SiO₂), and may have a thickness rangingfrom about 50 Å to about 350 Å. Dielectric layer 1110 may function as atunnel oxide layer for a subsequently formed memory cell ofsemiconductor device 300. In one implementation consistent withprinciples of the invention, a suitable method for forming layer 1110may include thermal oxidation process of layer 310 at a temperature ofabout 750° C. to 1100° C. Alternatively, dielectric layer 1110 may bedeposited using a low pressure chemical vapor deposition (LPCVD) processperformed at a temperature of about 400° C. to 800° C.

Charge storage elements 1125 may include a dielectric layer formed onlayer 1110 in a conventional manner. In one exemplary implementation,charge storage elements 1125 may include a nitride, such as siliconnitride (e.g., Si₃N₄), and may have a thickness ranging from about 50 Åto about 300 Å. Alternatively, charge storage elements 1125 may includea conductive layer, such as a polycrystalline silicon for use as chargestorage layer in a subsequently formed device.

An inter-gate dielectric (IGD) layer 1130 may be deposited over theetched FOX layer 710 and charge storage elements 1125 in a conventionalmanner (act 245). In implementations consistent with aspects describedherein, IGD layer 1130 may be an oxide/nitride/oxide (ONO) stack, anitride/oxide (NO) stack, a tantalum oxide (e.g., Ta₂O₅), or anysuitable dielectric material. In an exemplary implementation, IGD layer1110 may be an ONO stack have a thickness ranging from about 100 Å toabout 300 Å.

In an alternative implementation, nitride layer 320 may be selectivelyremoved following stripping of SiON mask 510, leaving a very uniform STIfield oxide step height across device 300. Minimal STI step heightvariation across the wafer results in improved control of deviceperformance (field Vt) and improved wafer yield. In this implementation,a charge storage layer may be formed and etched following removal oflayer 330 and prior to formation of IGD layer 1110.

Following IGD layer 1110 formation, a control gate layer 1210 may beformed on IGD layer 1110 in a conventional manner, as illustrated inFIG. 11 (act 250). In an exemplary implementation, control gate layer1210 may include a silicon, such as polycrystalline silicon(“polysilicon”), and may have a thickness ranging from about 1000 Å toabout 2000 Å. In one implementation consistent with principles of theinvention, a suitable method for forming control gate layer 1110 mayinclude chemical vapor deposition (CVD), although suitable alternativedeposition techniques may also be employed. Source and drain regions(not shown) may be formed in substrate 310 in a conventional manner.

FIG. 13 illustrates another exemplary process for forming asemiconductor memory device in an implementation consistent with aspectsdescribed herein. In the implementation of FIG. 13, an SiON mask layermay be used to enhance planarization during bitline formation of asemiconductor device. As with FIG. 2, the semiconductor memory devicedescribed in relation to FIG. 13 may include an array of memory cells ofa flash memory device, such as that illustrated in FIG. 1. FIGS. 14-21illustrate exemplary views of a semiconductor memory device fabricatedaccording to the processing described in FIG. 13.

Processing may begin with a semiconductor device 1400 that includeslayers 1410, 1420, and 1430. In an exemplary embodiment, layer 1410 mayinclude a substrate of semiconductor device 1400 and may includesilicon, germanium, silicon-germanium or other semiconducting materials.In alternative implementations, layer 1410 may be a conductive layer ora dielectric layer formed a number of layers above the surface of asubstrate in semiconductor device 1400.

Layer 1420 may be a dielectric layer formed on layer 1410 in aconventional manner. In an exemplary implementation, dielectric layer1420 may include an oxide, such as a silicon oxide (e.g., SiO₂), and mayhave a thickness ranging from about 50 Å to about 350 Å. In anotherexemplary implementation, layer 1420 may include an oxide-nitride-oxide(ONO) stack having a thickness ranging from about 100 Å to about 400 Å,where the nitride portion of the ONO stack functions as a charge storagelayer for a subsequently formed memory cell in device 1400. In oneimplementation consistent with principles of the invention, a suitablemethod for forming layer 1420 may include thermal oxidation process oflayer 1410 at a temperature of about 750° C. to 1100° C. Alternatively,dielectric layer 1420 may be deposited using a low pressure chemicalvapor deposition (LPCVD) process performed at a temperature of about400° C. to 800° C.

Layer 1430 may include a second dielectric layer formed on layer 1420 ina conventional manner. In one exemplary implementation, seconddielectric layer 1430 may include polycrystalline silicon(“polysilicon”), and may have a thickness ranging from about 500 Å toabout 1500 Å. Polysilicon layer 1430 may function as a gate electrode asubsequently formed memory cell of semiconductor device 1400.

As shown in FIG. 15, a silicon oxynitride (SiON) mask layer 1510 may beformed over layer 1430 (act 1305). In one exemplary implementation, SiONmask layer 1510 may be formed by CVD, and may have a thickness rangingfrom about 100 Å to about 500 Å. SiON mask layer 1510 may form aanti-reflective coating (ARC).

A photoresist material formed over mask layer 1510 may be patterned andetched in a conventional manner to form a hard mask 1610 on the topsurface of layer 1430, as illustrated in FIG. 16 (act 1310). Mask 1610may be used to define active regions in the subsequently formed memorydevice and indicate areas that will not be etched during formation ofisolation regions in semiconductor device 1400. By providinganti-reflective coating SiON mask 1610 beneath a photoresist materialprior to performing photolithography, optical reflections of theradiation used to develop the mask pattern may be minimized.Accordingly, by using ARC SiON layer 1510 a more precise lithography maybe applied, resulting in narrower mask spacings.

Semiconductor device 1400 may then be etched, as illustrated in FIG. 16,to remove portions of layers 1420 and 1430 and form a number of gatestacks in a pattern within layers 1420 and 1430 (act 1315). Remainingportions of polysilicon layer 1430 may act as a gate electrode layer1620 for semiconductor device 1400.

As shown in FIG. 17, buried bitline regions 1710 may be formed inexposed portions of layer 1410 (act 1320). In one implementation, buriedbitline regions 1710 may be formed by ion implantation of arsenic usinga dose of about 3×10¹⁵ to 5×10¹⁵ ions per square centimeter. The ionimplementation energy may be selected to form buried bitline region 1710to a selected junction depth in substrate layer 1410. As used herein,the term “junction depth” refers to a distance from the surface ofsubstrate layer 1410 to the deepest point of formation of a p/n junctionassociated with the implanted buried bitline region 1710 withinsubstrate layer 1410. It should be understood that the timing of bitlineregion formation described above is merely exemplary. For example,bitline region 1710 may be formed by ion implantation through layers1420 and 1430 prior to formation of SiON mask layer 1610.

Following formation of buried bitline regions 1710, a bitline oxidelayer 1810 may be deposited over bitline regions 1710 and SiON mask1610, as illustrated in FIG. 18 (act 1325). In one implementationconsistent with principles of the invention, bitline oxide layer 1810may be deposited by high density plasma chemical vapor deposition (HDPCVD), although suitable alternative deposition techniques may also beemployed.

In accordance with aspects described herein, bitline oxide layer 1810may be planarized using, for example, a slurry-based CMP process to forma planar top surface 1910 and to expose the upper surface of SiON mask1610, as illustrated, in FIG. 19 (act 1330). After the CMP process, thetop surface of bitline oxide layer 1810 may be substantially planar withthe top surface of SiON mask 1610. In one exemplary implementation, CMPmay be performed using at least a ceria-based slurry. In one embodiment,CMP may be initiated using a silica-based slurry that is thentransitioned to a ceria-based slurry following a predetermined period oftime. By using a SiON mask 1610 as a CMP stop layer, a lower selectivityceria-based slurry may be used at a faster polish rate, resulting in amore robust clearing margin.

Following planarization of bitline oxide layer 1810, semiconductordevice 1400 may be etched, as illustrated in FIG. 20, to remove or stripSiON mask 1610 and expose a top surface of gate electrode layer 1620(act 1335). In one exemplary implementation, SiON mask layer 1610 may beetched using a wet etching technique using, for example, phosphoricacid, to limit the etching to only SiON mask layer 1610 without damaginggate electrode layer 1620 or bitline oxide layer 1810.

In an alternative implementation, SiON mask 1610 may be removed using adry plasma etching technique using, for example, a fluorinatedhydrocarbon gas, such as e.g., CH₃F, CHF₃, and CH₂F₂ having highselectivity for removing only the SiON mask 1610 without substantiallyetching bitline oxide layer 1810 or gate electrode layer 1620. Followingetching of SiON mask layer 1610, a portion of bitline oxide layer 1810may form a protrusion above the surface of gate electrode layer 1620, asillustrated in FIG. 20.

Referring to FIG. 21, a wordline conductor layer 2110 may be formed overthe gate electrode layer 1620 and bitline oxide layer 1810 in aconventional manner (act 1340). For example, a metal, such as copper,tungsten or aluminum, may be deposited to form an interconnect thatconnects various features in semiconductor device 1400, such as gatelayers 1620 to an external electrode, to facilitate operation (e.g.,programming, erasing, etc.) of the semiconductor device 1400.

The description above focuses on a semiconductor memory devices 300 and1400, such as an EEPROM, that stores one bit of data per memory cell. Inother implementations, a number of memory cells may be configured tostore two or more bits of data. That is, charge storage layers 330 and1420 may be programmed to store charges representing two or moreseparate bits of data by localizing the charges to the respectiveportions of charge storage layers 330 and 1420. Each of the charges ofthe memory cell may be programmed independently by, for example, channelhot electron injection, to store a charge on each respective side of thecharge storage layers 330 and 1420. In this manner, the charges incharge storage layers 330 and 1420 become effectively trapped inrespective portions of charge storage layers 330 and 1420. Erasing ofeach charge in the memory cell may also be performed independently.During Fowler-Nordheim (FN) erasing, the charges stored in chargestorage layers 330 and 1420 may tunnel through dielectric layers 320 and1420, respectively. In this manner, the density of the resulting memoryarray in semiconductor devices 300 and 1400 may be increased as comparedto conventional memory devices that store only one bit of data per cell.

In the previous descriptions, numerous specific details are set forth,such as specific materials, structures, chemicals, processes, etc., inorder to provide a thorough understanding of the invention. However,implementations described herein may be practiced without resorting tothe details specifically set forth herein. In other instances, wellknown processing structures have not been described in detail, in ordernot to unnecessarily obscure the thrust of the invention.

For example, the dielectric and conductive layers used in manufacturinga semiconductor device in accordance with the invention can be depositedby conventional deposition techniques. For example, various types ofchemical vapor deposition (CVD) processes, including low pressurechemical vapor deposition (LPCVD) and enhanced chemical vapor deposition(ECVD) can be employed. In addition, conventional electroplating,photolithographic and etching techniques may also be employed, andhence, the details of such techniques have not been set forth herein indetail.

Aspects described herein may be applicable in the manufacturing ofsemiconductor devices and particularly in memory devices having smalldesign features and high circuit density. However, the described aspectsare applicable to the formation of any of various types of semiconductordevices, and hence, details have not been set forth in order to avoidobscuring the thrust of the invention.

CONCLUSION

The foregoing description of exemplary embodiments of the inventionprovides illustration and description, but is not intended to beexhaustive or to limit the invention to the precise form disclosed.Modifications and variations are possible in light of the aboveteachings or may be acquired from practice of the invention. Forexample, in the above descriptions, numerous specific details are setforth, such as specific materials, structures, chemicals, processes,etc., in order to provide a thorough understanding of the presentinvention. However, implementations consistent with the invention can bepracticed without resorting to the details specifically set forthherein. In other instances, well known processing structures have notbeen described in detail, in order not to unnecessarily obscure thethrust of the present invention. In practicing the present invention,conventional deposition, photolithographic and etching techniques may beemployed, and hence, the details of such techniques have not been setforth herein in detail.

While series of acts have been described with regard to FIGS. 2 and 13,the order of the acts may be varied in other implementations consistentwith the invention. Moreover, non-dependent acts may be implemented inparallel.

No element, act, or instruction used in the description of the presentapplication should be construed as critical or essential to theinvention unless explicitly described as such. Also, as used herein, thearticle “a” is intended to include one or more items. Where only oneitem is intended, the term “one” or similar language is used. Further,the phrase “based on” is intended to mean “based, at least in part, on”unless explicitly stated otherwise.

1. A method, comprising: forming a silicon oxynitride mask layer over afirst layer, etching the first layer using the silicon oxynitride masklayer, to form a pattern in the first layer; filling the pattern with adielectric material to form a dielectric layer; and polishing thedielectric material with a silica-based slurry for a first predeterminedperiod of time; and polishing the dielectric material with a ceria-basedslurry for a second predetermined period of time using the siliconoxynitride mask layer as a stop layer following the polishing thedielectric material with the silica-based slurry.
 2. The method of claim1, wherein the silicon oxynitride mask layer comprises ananti-reflective layer. 3-5. (canceled)
 6. The method of claim 1, whereinthe dielectric layer comprises an oxide layer.
 7. The method of claim 1,wherein the silicon oxynitride mask layer has a thickness ranging fromabout 100 Å to about 500 Å.
 8. The method of claim 1, wherein the firstlayer comprises at least a substrate layer.
 9. The method of claim 8,wherein the first layer further comprises a second dielectric layerformed over the substrate layer.
 10. The method of claim 9, wherein thesecond dielectric layer comprises a nitride layer.
 11. The method ofclaim 8, wherein the pattern in the first layer comprises a trench inthe substrate layer.
 12. The method of claim 11, wherein the dielectriclayer comprises a field oxide layer.
 13. The method of claim 12, furthercomprising: selectively removing the silicon oxynitride mask layer; andforming at least two charge storage elements over the substrate layer onopposite sides of the trench.
 14. The method of claim 1, furthercomprising: forming a second layer over the first layer, wherein thefirst layer comprises a substrate layer and the second layer comprises asacrificial nitride layer formed over the substrate layer.
 15. Themethod of claim 14, further comprising: selectively removing thesacrificial nitride layer; and forming a gate structure over thesubstrate layer.
 16. The method of claim 14, wherein the etching thefirst layer comprises forming a pattern in the gate structure.
 17. Themethod of claim 14, wherein the dielectric layer is a bitline oxidelayer.
 18. A method for fabricating a semiconductor device, comprising:forming a first dielectric layer over a substrate; forming a seconddielectric layer over the first dielectric layer; forming a siliconoxynitride mask layer over the second dielectric layer; forming aphotoresist layer over the silicon oxynitride mask layer; patterning thephotoresist layer to define mask regions; etching the silicon oxynitridemask layer to form a silicon oxynitride mask; etching the substrate, thefirst dielectric layer, and the second dielectric layer to form at leastone isolation trench in a portion of the substrate not covered by thesilicon oxynitride mask; filling the trench with a dielectric material;polishing the dielectric material with a silica-based slurry for a firstpredetermined period of time; polishing the dielectric material with aceria-based slurry for a second predetermined period of time using thesilicon oxynitride mask layer as a stop layer following the polishingthe dielectric material with the silica-based slurry; stripping thesilicon oxynitride mask from the semiconductor device; forming a thirddielectric layer over the second dielectric layer and the dielectricmaterial; and forming a control gate over at least a portion of thethird dielectric layer.
 19. A method for fabricating a semiconductordevice, comprising: forming a first dielectric layer over a substrate;forming a gate electrode layer over the first dielectric layer; forminga silicon oxynitride mask over the gate electrode layer; etching thefirst dielectric layer and the gate electrode layer; forming a bitlineregion in a portion of the substrate; forming an oxide layer over thesemiconductor device, the oxide layer filling regions etched by theetching; polishing the oxide layer with a silica-based slurry for afirst predetermined period of time; polishing the oxide layer with aceria-based slurry for a second predetermined period of time using thesilicon oxynitride mask as a stop layer following the polishing theoxide layer with the silica-based slurry; stripping the siliconoxynitride mask from the semiconductor device; and forming a wordlineconductor layer over the gate electrode layer and the oxide layer. 20.The method of claim 19, wherein the silicon oxynitride layer has athickness ranging from about 100 Å to about 500 Å.